Film semiconductor device

摘要: PURPOSE: To dissolve the deviation of output voltage a film semiconductor device equipped with CMOS inverter without sacrifying transmission speed or increasing occupied area by doping channel region an n-type transistor p-type impurities. CONSTITUTION: This is device, which constituted pair and elements 5 6, doped Generally, in TFT, where Polycrystal silicon used for layer, driving capacity TFT larger than TFT. But, if impurities are implanted into 5, inverse threshold becomes high, so it decreases difference force between balance on properties can be taken. Hereby, improved. COPYRIGHT: (C)1992,JPO&Japio