Ambipolar transistor design
作者： Beng S. Ong , Yiliang Wu , Alphonsus Hon-Chung Ng
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摘要: An ambipolar transistor, including a p-type semiconductor region and an n-type near the region. Also first terminal second contact both Furthermore, substantially do not overlap each other. A method of manufacturing transistor is also disclosed, forming region, contacting region; wherein overlap, have no interfacial area.
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