作者: Yuuichi Takeuchi , Norihito Tokura , Shigeki Takahashi , Tsuyoshi Yamamoto , Mitsuhiro Kataoka
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摘要: A manufacturing method for a semiconductor device, which can attain low ion voltage in device involving process forming groove by etching prior to selective oxidation, selectively oxidizing region including the and thereby making channel part of groove, is disclosed. thermally oxidized using silicon nitride film as mask. LOCOS oxide formed this thermal concurrently U-groove on surface an n - -type epitaxial layer eroded film, shape fixed. curve during chemical dry remains side U-groove. Then, + source means diffusion junction thickness 0.5 1 μm, set up well. The depth obtained more deeply than above after oxidation.