Semiconductor device having a groove with a curved part formed on its side surface

作者: Yuuichi Takeuchi , Norihito Tokura , Shigeki Takahashi , Tsuyoshi Yamamoto , Mitsuhiro Kataoka

DOI:

关键词:

摘要: A manufacturing method for a semiconductor device, which can attain low ion voltage in device involving process forming groove by etching prior to selective oxidation, selectively oxidizing region including the and thereby making channel part of groove, is disclosed. thermally oxidized using silicon nitride film as mask. LOCOS oxide formed this thermal concurrently U-groove on surface an n - -type epitaxial layer eroded film, shape fixed. curve during chemical dry remains side U-groove. Then, + source means diffusion junction thickness 0.5 1 μm, set up well. The depth obtained more deeply than above after oxidation.

参考文章(8)
N. Tokura, S. Takahashi, K. Hara, The DMOS consisting of channel region defined by LOCOS (LOCOS-DMOS): a new process/device technology for low on-resistance power MOSFET international symposium on power semiconductor devices and ic's. pp. 135- 140 ,(1993) , 10.1109/ISPSD.1993.297124
Charles E. Weitzel, Neal J. Mellen, Kenneth L. Davis, Method of fabricating a silicon carbide vertical MOSFET and device ,(1993)
Shigeki Nippondenso Co. Ltd. Takahashi, Norihito Nippondenso Co. Ltd. Tokura, Method of producing vertical mosfet ,(1992)
Yoshiaki Yazawa, Takahiro Nagano, Vertical-type insulated-gate field-effect transistor ,(1987)
Shigeo Otaka, Tetsuo Iijima, Akio Ando, Semiconductor element and manufacture thereof ,(1989)