Magnetic Ions in Group IV Semiconductors
作者： Roberto Gunnella
DOI: 10.1007/978-3-662-44362-0_14
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摘要: XAS experiments at the TM K-edge in semiconductors, will be employed as a crucial technique to spread light not only on mechanisms of atomic substition, but also investigate how semiconductor surrounding metal is perturbed by insertion an extrinsic species. Wherever nominal dilution Mn obtained, such investigations put physical constraints that must considered describe electronic problem ferromagnetism on-set. Contrarily case III-V group doped semiconductors research field still incomplete and many systems have been dealt with yet any details, possibly because more difficult realization controversial interpretation.
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