Dislocation activity and brittle-ductile transitions in single crystals
作者： S.G. Roberts , A.S. Booth , P.B. Hirsch
DOI: 10.1016/0921-5093(94)90962-8
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摘要: Abstract Experimental work on the brittle-ductile transition (BDT) has shown that activation energy for BDT is equal to dislocation glide in silicon, germanium and sapphire. Simple models, based shielding effect of a single evolving array dislocations, can account most features such materials. These models are reviewed. Modification sources test specimens be used change temperature “shape” BDT; thus realistic positioning behaviour critical achieving an accurate simulation experiments. Magnetism oxide, hydrogen-embrittled iron-silicon molybdenum exhibit stable crack growth before fracture; process appears by dislocation-enhanced microcleavage. results New show single-crystals TiAl behaves this way. A model outlined.
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