Multilayer wiring structure and semiconductor device having the same, and manufacturing method therefor

摘要: In a multilayer wiring structure, plurality of layers (9, 11, 13) are formed on an inorganic lowermost insulating film (2) silicon substrate (1), and organic interlayer films (14, 15, 16, 17, 18) interposed between the respective adjacent layers. Via metal (8, 10, 12) in (15, 17), openings having shape corresponding to electrode pad 18), these filled with material form patterns (3, 4, 6, 5, 7), whereby is constructed as laminate body 7). Accordingly, even when low dielectric constant used for films, durability portion impacts bonding process enhanced, both reduction parasitic capacitance enhancement strength can be achieved.