Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition

摘要: The interband transitions in single‐crystal GaN films grown by metalorganic chemical vapor deposition (MOCVD) have been studied as a function of temperature (15≤T≤300 K) reflectance and photoluminescence measurements. At low temperatures, well‐resolved spectral features corresponding to the band structure were observed. energies excitonic ΓV9−ΓC7,ΓV7 (upper band)−ΓC7 ΓV7(lower are found be 3.485, 3.493, 3.518 eV at 15 K, respectively, for MOCVD GaN. broadened shift lower energy increases. room (300 K), ΓV9−ΓC7and ΓV7 band) −ΓC7 transition this wide band‐gap material determined 3.420 3.428 eV, respectively. dependence these two using Varshni empirical relation. Our results yield E0(T)=3.486–8.32×10−4 T2/(835.6+T) ΓV9−ΓC7 E0(T)=3.494–10.9×10−4 T2/(1194.6+T) ...