作者: Pierre-Yves Lesaicherre , Hiromu Yamaguchi , Yoichi Miyasaka , Hirohito Watanabe , Haruhiko Ono
DOI: 10.1080/10584589508012313
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摘要: Abstract Three important aspects of the preparation SrTiO3 thin films by MOCVD are discussed in detail view application these as capacitor dielectric Gbit-scale DRAMs: CVD reactions Sr(DPM)2-Ti(i-OC3H7)4-O2 system, step coverage and relations between microstructure electrical properties. The effect substrate temperature on Sr Ti deposition rates was first investigated for thermal ECR films. SrO TiO2 above 550°C were found to be controlled surface reaction gas transport, respectively, whereas both transport at 450 600°C. influence regimes SrO, then assessed. prepared 600°C exhibited best coverage, indicating that a relation exists good coverage. film compositio...