Organometallic chemical vapor deposition of strontium titanate
作者： W. A. Feil , B. W. Wessels , L. M. Tonge , T. J. Marks
DOI: 10.1063/1.345034
关键词:
摘要: SrTiO3 thin films were deposited by low‐pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water used as reactants, argon was a carrier gas. Growth rates ranging from 0.3 to 4.5 μm/h obtained on (0001) sapphire substrates at 600–850 °C. Highly textured with [111] orientation growth temperature of 800 °C. The parameters which influenced the composition, phase stability, morphology, texture examined.
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