作者: Seung‐Hee Nam , Ho‐Gi Kim
DOI: 10.1063/1.351490
关键词: Annealing (metallurgy) 、 Thin film 、 Surface layer 、 Crystallinity 、 Sputter deposition 、 Strontium titanate 、 Dielectric 、 Composite material 、 Analytical chemistry 、 Materials science 、 Carbon film
摘要: Strontium titanate thin films have been prepared on p‐type Si(100) substrates by radio frequency (rf) magnetron sputtering. The were deposited at 400 °C and annealed various temperatures. polycrystalline the crystallinity of was increased annealing. SrTiO3 composed three regions; an external surface layer, a main interface layer. composition width layer not changed annealing below 600 °C. ratio films, as analyzed Rutherford backscattering technique, 1, 1.1, 3 for Sr, Ti, O, respectively. electrical properties dramatically controlled film 600 °C had ideal capacitance‐voltage characteristics maximum effective dielectric constant.