作者: Kaien Xu , Manwen Yao , Jianwen Chen , Pei Zou , Yong Peng
DOI: 10.1016/J.JALLCOM.2015.09.017
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摘要: Abstract SrTiO3 thin films were deposited onto Pt (100)/Ti/SiO2/Si and fused silica substrates by sol–gel spin-coating technology. The crystallinity of the may be adjusted means annealing temperatures. electronic band structure was analyzed UV–vis spectrophotometer, indicating that amorphous crystalline quite different. surface chemical states X-ray photoelectron spectroscopy (XPS), defect structures apparently Photoelectric dielectric properties measured using electrochemical workstation LCR meter, respectively. results show crystallization films, an effective way modulation, makes significant influence on semiconducting property films. From perspective structure, essential difference between analyzed. 750 °C found to optimum temperature for obtaining dense homogeneous with a photocurrent density 1.1 μA/cm2.