作者: Guang-chao Chen , Meiyong Liao , Masataka Imura , Kiyomi Nakajima , Yoshimasa Sugimoto
DOI: 10.1016/J.DIAMOND.2010.01.001
关键词: Physical vapor deposition 、 Diamond-like carbon 、 Sputter deposition 、 Materials science 、 Crystallinity 、 Optoelectronics 、 Diamond 、 Mineralogy 、 Amorphous solid 、 Strontium titanate 、 Thin film
摘要: Abstract Strontium titanate (STO) films were directly deposited on Ib (100) single crystal diamond by r.f. magnetron sputtering. The as-deposited STO film was in amorphous state. On the other hand, crystalline obtained under optimized condition of a deposition temperature 250 °C and post-annealing 650 °C. STO/diamond junctions fabricated boron-doped homoepitaxial layers grown p + -type substrates. Electrical properties junction investigated changing surface terminations with hydrogen or oxygen crystallinity film. It found that acted like semi-insulator H-diamond STO/O-diamond behaved Schottky diode. showed complex rectifying behavior. possessed higher dielectric constant as compared to one.