Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
作者： Shaoheng Cheng , Liwen Sang , Meiyong Liao , Jiangwei Liu , Masataka Imura
DOI: 10.1063/1.4770059
关键词:
摘要: The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase δ-Ta2O5 film is achieved by annealing amorphous deposited a sputter-deposition technique. electrical properties thin are investigated fabricating metal-insulator-semiconductor (MIS) diodes. leakage current MIS diode as low 10−8 A/cm2 as-deposited and 10−2 crystallized film, which 108 102 times lower than that Schottky at forward bias −3 V, respectively. dielectric measured to be 16 increases 29 after 800 °C. Different mechanisms charge trapping behaviors proposed films.
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