An in-line process monitoring method using electron beam induced substrate current

摘要: In-line process monitoring technology plays a vital role in accelerating yield ramps and quickly identifying resolving excursions the system on chip era. We have developed an in-line method that uses electron beam induced substrate current. It is especially suitable for deep contacts via holes. This makes it possible to monitor non-destructive via-hole formation with hole-bottom nm-order SiO2 film thickness measurement diameter measurement. Moreover, allows us evaluate etching-process variation over 8-inch wafer less than 20 min. The results can be used device sorting as well decisions regarding timing of etching machine maintenance.