Formation of TiSi/sub 2/ and shallow junction by As/sup +/ ion-beam mixing and infrared rapid heat treatment
作者： M. Ye , H.W. Lin , P.-H. Tsien , J.-P. Zhang , S.-D. Yin
DOI: 10.1109/16.19962
关键词:
摘要: A technique for forming shallow junctions with low-resistance silicide contacts developed the use in VLSI scaled MOSFETs is discussed. The salicide (self-aligned silicide) MOSFET gate and source-drain features self-aligned refractory metal are isolated from one another even without any insulating spacer on sides. critical step such a fabrication process ion implantation through silicidation technique, which includes As/sup +/ ion-beam-induced titanium-silicon interface mixing infrared rapid heat treatment to form simultaneously n/sup +/-p junction high-quality TiN covered TiSi/sub 2/ contact layer. >
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