Silicide for contacts and interconnects

摘要: The use of silicide materials in silicon VLSI technology is reviewed three most important areas. application silicides to device contacts for lowering the contact resistance and/or controlling Schottky barrier heights. on top polysilicon (Polycide) as gate MOS devices enhancing interconnections. And, all diffusion and areas simultaneously by using self-aligned scheme (Salicide) reducing series resistance, interconnects. In each case, choice materials, critical processing parameters, its technical constraints are discussed.