Microstructure investigation on barrier shapes of double barrier magnetic tunnel junctions
作者： Y. Wang , Z. M. Zeng , S. Rehana , X. F. Han , X. C. Sun
DOI: 10.1063/1.2337765
关键词:
摘要: Barrier shapes and its detailed microstructures in the double barrier magnetic tunnel junctions were intensively investigated by both high resolution transmission electron microscopy holography. Two broad (>2nm) potential wells (i.e., of AlOx layers) with slanted interfaces observed hologram as-deposited samples. However, annealed samples, two narrowed (down to 1.18nm) almost equal (height) sharp steep acquired. This indicates that value magnetoresistance can be increased from 12.8% 29.4% at room temperature annealing treatment where sharpness height barriers played a critical role.
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