Indirect exchange interaction in semiconductors

作者: L. Liu

DOI: 10.1016/0038-1098(80)90241-0

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摘要: Abstract We study theoretically the nature of indirect exchange interaction between localized moments in a semiconductor, mediated by spin-dependent spatial polarization valence band electrons. The drops off exponentially with inter-spin distance and decay constant depends on energy gap carrier effective masses. sign is ferromagnetic within our simplified model but could be reversed for some more complicated edge structures.

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