Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (x<y) virtual substrates
作者： Jongwan Jung , Shaofeng Yu , Oluwamuyiwa Oluwagbemiga Olubuyide , Judy L. Hoyt , Dimitri A. Antoniadis
DOI: 10.1063/1.1719275
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摘要: Annealing effects on hole and electron mobility in dual-channel structures consisting of strained Si Si1−yGey relaxed Si1−xGex layers (x=0.3/y=0.6, x=0.5/y=0.8) were studied. Hole decreases sharply, but is quite immune to annealing conditions 800 °C, 30 min or 900 °C, 15 s. The decrease more severe with higher Ge contents. degradation a direct result outdiffusion from the layer, resulting decreased content. diffusion preferentially towards buffer rather than cap reason that highly such annealing.
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Michelle Griglione, Timothy J. Anderson, Yaser M. Haddara, Mark E. Law, Kevin S. Jones, Alex van den Bogaard, Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients Journal of Applied Physics. ,vol. 88, pp. 1366- 1372 ,(2000) , 10.1063/1.373825
C. W. Leitz, M. T. Currie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis, E. A. Fitzgerald, Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates Applied Physics Letters. ,vol. 79, pp. 4246- 4248 ,(2001) , 10.1063/1.1423774
Minjoo L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, Dimitri A. Antoniadis, Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates Applied Physics Letters. ,vol. 79, pp. 3344- 3346 ,(2001) , 10.1063/1.1417515
J. Welser, J.L. Hoyt, J.F. Gibbons, Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors IEEE Electron Device Letters. ,vol. 15, pp. 100- 102 ,(1994) , 10.1109/55.285389
A. Strohm, T. Voss, W. Frank, J. Räisänen, M. Dietrich, Self-diffusion of 71Ge in Si–Ge Physica B-condensed Matter. ,vol. 308, pp. 542- 545 ,(2001) , 10.1016/S0921-4526(01)00814-6
Jongwan Jung, M.L. Lee, Shaofeng Yu, E.A. Fitzgerald, D.A. Antoniadis, Implementation of both high-hole and electron mobility in strained Si/strained Si 1-y Ge y on relaxed Si 1-x Ge x (x<y) virtual substrate IEEE Electron Device Letters. ,vol. 24, pp. 460- 462 ,(2003) , 10.1109/LED.2003.814028
N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, W. B. de Boer, Diffusion in strained Si(Ge). Physical Review Letters. ,vol. 72, pp. 2585- 2588 ,(1994) , 10.1103/PHYSREVLETT.72.2585
G. Höck, E. Kohn, C. Rosenblad, H. von Känel, H.-J. Herzog, U. König, High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition Applied Physics Letters. ,vol. 76, pp. 3920- 3922 ,(2000) , 10.1063/1.126821
G. L. McVay, A. R. DuCharme, Diffusion of Ge in SiGe alloys Physical Review B. ,vol. 9, pp. 627- 631 ,(1974) , 10.1103/PHYSREVB.9.627
D. B. Aubertine, M. A. Mander, N. Ozguven, A. F. Marshall, P. C. McIntyre, J. O. Chu, P. M. Mooney, Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers Journal of Applied Physics. ,vol. 92, pp. 5027- 5035 ,(2002) , 10.1063/1.1508424