Graded semiconductor layer

作者: Voon-Yew Thean , Alexander L. Barr , Chun-Li Liu , Ted R. White , Shawn G. Thomas

DOI:

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摘要: A process for forming a semiconductor device. The includes template layer of strained silicon. In one example graded silicon germanium is formed where the at higher concentration lower portion and top portion. When subject to condensation process, diffuses remaining layer. Because has portions, pile up after may be reduced upper

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