Determination of electrical parameters of ZnO/Si heterojunction device fabricated by RF magnetron sputtering

摘要: In the present study, electrical parameters of ZnO/Si heterojunction device fabricated via RF magnetron sputtering are examined in detail and results compared with literature. Structural morphological analyses have been done to understand expound behavior studies. XRD analysis confirms crystal formation ZnO phase (103) (111) oriented, while AFM shows that film surface is homogeneous mean roughness approximately as 2 nm. The carrier concentration conductivity type thin were obtained by Hall Effect measurement 5.56 × 1017 cm−3, n-type, respectively. dark current–voltage capacitance–voltage measurements carried out obtain device. From ideality factor, barrier height, series resistance estimated n = 2.16, Φb = 0.71 eV, Rs = 92.5 Ω. height was also handled at room temperature. those from similar or different production methods. Illumination performed determine if has photovoltaic properties.