Effect of air annealing on the electronic properties of CdSCu(In,Ga)Se2 solar cells
作者： E. Moons , D. Gal , J. Beier , G. Hodes , David Cahen
DOI: 10.1016/0927-0248(95)00167-0
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摘要: Abstract The effect of air annealing on state-of-the-art, solar-cell-quality CdS Cu(In,Ga)Se 2 heterojunctions has been studied using contact potential difference and surface photovoltage measurements. treatment is shown to have no significant the band lineup heterojunction. However, spectral response increases markedly upon annealing. These results can be reconciled if junctions leads mainly elimination recombination centers, rather than changes in built-in voltage or lineup. We also show that ZnO deposition an similar
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