Microstructure and electrical conductivity of In-doped CdS thin films
作者： NM Megahid , MM Wakkad , E Shokr , NM Abass , None
DOI: 10.1016/J.PHYSB.2004.08.013
关键词: Annealing (metallurgy) 、 Scanning electron microscope 、 Microstructure 、 Doping 、 Electrical resistivity and conductivity 、 Crystallization 、 Thin film 、 Conductivity 、 Materials science 、 Composite material
摘要: The effect of the In/Cd ratio on both microstructure and electrical conductivity parameters CdS thin films, as a good material for optical windows, was investigated. A new preparation method In-doped films used. effects annealing time temperature well thin-film thickness mentioned physical properties were studied. Qualitatively, increase In content with increasing could be observed using energy dispersive analysis X-ray (EDAX), matter which may used to confirm validity method. process found promote investigated films. This can attributed crystallization revealed by diffraction patterns scanning electron microscope photomicrographs.
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