Conduction dans les couches minces polycristallines de Zn1-xCdx preparées par pulvérisation cathodique reactive

作者: S. Durand

DOI: 10.1016/0040-6090(77)90026-8

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摘要: Resume Nous avons etudie la conduction, en regime continu, de couches minces polycristallines sulfure mixte Zn 1- x Cd S, preparees par pulverisation cathodique reactive, fonction du pourcentage moleculaire CdS dans solution solide. L'etude conduction conduit a un modele theorique assimilant couche mince une juxtaposition barrieres potentiel (schematisant les joints grains) et grains sulfure. L'evolution des differentes parametres ce est liee avec valeur moleculaire.

参考文章(14)
A. Servini, A.K. Jonscher, Electrical conduction in evaporated silicon oxide films Thin Solid Films. ,vol. 3, pp. 341- 365 ,(1969) , 10.1016/0040-6090(69)90138-2
W. E. Taylor, N. H. Odell, H. Y. Fan, Grain Boundary Barriers in Germanium Physical Review. ,vol. 88, pp. 867- 875 ,(1952) , 10.1103/PHYSREV.88.867
R. Ludeke, A Survey of Optical and Electrical Properties of Thin Films of II–VI Semiconducting Compounds Journal of Vacuum Science and Technology. ,vol. 8, pp. 199- 209 ,(1971) , 10.1116/1.1316286
Juliusz Sworakowski, Space‐Charge‐Limited Currents in Solids with Nonuniform Spatial Trap Distribution Journal of Applied Physics. ,vol. 41, pp. 292- 295 ,(1970) , 10.1063/1.1658336
Robert M. Hill, Transport phenomena in thin films Thin Solid Films. ,vol. 12, pp. 367- 381 ,(1972) , 10.1016/0040-6090(72)90101-0
Peter Mark, Wolfgang Helfrich, Space‐Charge‐Limited Currents in Organic Crystals Journal of Applied Physics. ,vol. 33, pp. 205- 215 ,(1962) , 10.1063/1.1728487
A. Waxman, V. E. Henrich, F. V. Shallcross, H. Borkan, P. K. Weimer, Electron Mobility Studies in Surface Space‐Charge Layers in Vapor‐Deposited CdS Films Journal of Applied Physics. ,vol. 36, pp. 168- 175 ,(1965) , 10.1063/1.1713867
J.C. Anderson, Barrier-limited mobility in thin semiconductor films Thin Solid Films. ,vol. 18, pp. 239- 245 ,(1973) , 10.1016/0040-6090(73)90102-8
Robert Stratton, Surface Barriers at Semiconductor Contacts Proceedings of the Physical Society. Section B. ,vol. 69, pp. 513- 527 ,(1956) , 10.1088/0370-1301/69/5/303