作者: Shadia J. Ikhmayies , Riyad N. Ahmad-Bitar
DOI: 10.1016/J.VACUUM.2011.07.056
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摘要: Abstract An investigation of selected contacts for indium doped cadmium sulphide (CdS:In) thin films was performed through the analysis I–V characteristics in dark and room light at temperature. Indium, aluminum silver were as where two strips each metal vacuum- evaporated on surface film. All these metals could form ohmic contacts, but had shown best then aluminum. Films with gave electrical properties they are slightly affected by light. Doping annealing found to improve seen plots because expected reduce contact potential helps formation an alloy semiconductor which forms contact.