Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates

摘要: Abstract A process for removing defective Ge layers near Ge/Si interface during active region definition, thus allowing nearly defect-free channels, was investigated. By adjusting the HBr/Cl 2 plasma ratio and bias power, different fin-like field-effect transistor structures can be fabricated. This allowed better gate control than conventional rectangular fins due to gate-all-around (GAA) fin fabricated using process. Additionally, because effective width of triangular is larger fins, GAA field effect transistors also have a higher current density. technique used obtain suspended from epitaxial grown over Si substrates, as well other alloy semiconductors, an integration device.