Non-destructive evaluation methods for subsurface damage in silicon wafers: a literature review
作者： Weike Lu , Z.J. Pei , J.G. Sun
DOI: 10.1504/IJMMM.2007.012672
关键词:
摘要: The Subsurface Damage (SSD) in silicon wafers induced by any mechanical material-removal processes has to be removed subsequent processes. Therefore, the measurement of SSD is critically important for cost-effective manufacturing wafers. This review paper presents several Non-Destructive Evaluation (NDE) methods wafers, including X-ray diffraction, micro-Raman spectroscopy, photoluminescence and laser scattering.
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