GRINDING-AND-SLICING TECHNIQUE AS AN ADVANCED TECHNOLOGY FOR SILICON WAFER SLICING

作者: H. K. Tonshoff , B. Karpuschewski , M. Hartmann , C. Spengler

DOI: 10.1080/10940349708945636

关键词:

摘要: Abstract Monocrystalline silicon wafers of high purity are widely used as substrate materials in microelectronic industry. One step is to cut the ingot into thin wafers. For further improvement this process-step a new grinding-and-slicing (GS) technique has been developed, which allows production quality To ensure an efficient and economic use GS technique, application monitoring systems indispensable due complexity process. A system for tool wear radial concentricity error inner diameter (ID) blade ID- GS-sawing machines presented. The functions based on acoustic emission because sensitivity, robustness, low cost.

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