Method for producing non-monocrystalline semiconductor device

摘要: A method for producing a non-monocrystalline semiconductor device, such as amorphous silicon TFT, by forming at least two films in successive manner on substrate plasma CVD, which the film-growing surface and interfaces of formed are constantly maintained atmosphere until end film formation. In this interface regions protected from damage caused initial stage eventual deposition impurities regions. This is achieved, example, spreading area during transfer between film-forming chambers.