Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs
作者： Chun Wing Yeung , Asif I. Khan , Sayeef Salahuddin , Chenming Hu
关键词:
摘要: We present a simulation-based analysis of device design for ultra-thin body non-hysteretic Negative-Capacitance-FET (NCFET). Subthreshold swing dependencies on the relationship between negative capacitance (from ferroelectric) and positive underlying MOSFET) are illustrated. To achieve less than 60mV/decade hysteresis free operation, needs to be smaller gate oxide capacitance, larger total MOSFET within operating voltage.
nctu.edu.tw参考文章(1)
Sayeef Salahuddin, Supriyo Datta, Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Nano Letters. ,vol. 8, pp. 405- 410 ,(2008) , 10.1021/NL071804G