Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors
作者： Ahmedullah Aziz , Swapnadip Ghosh , Suman Datta , Sumeet Gupta
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摘要: We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent Landau–Khalatnikov equation solved self-consistently with the transistor equations. The also considers depolarization fields due to non-ideal contacts. experimentally characterize FE films calibrate our model, which we analyze device and circuit implications of FEFETs. discuss dependence ON current gate capacitance FEFETs thickness material parameters. A ring oscillator analysis shows delay reduction up 97% at iso-energy compared MOSFETs $V_{\mathrm{ DD}} V. FEFET-based SRAMs show 47%–68% larger read stability 50%–57% lower access time, albeit an increase in write time.
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