Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions
作者： Xi-Li Gao , Xiao-Zhong Zhang , Cai-Hua Wan , Ji-Min Wang
DOI: 10.1088/0256-307X/29/2/027102
关键词:
摘要: Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated. For reverse applied voltages, a-C:N/Si exhibit metal-insulator transition temperature can be controlled voltages. After excitation of repeated high curves show obvious hysteresis behaviors low temperatures. These reproducible ratio high/low resistance greater than 104.
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