Quenching of the Hall effect in a novel geometry
作者： A.M. Chang , T.Y. Chang
DOI: 10.1016/0039-6028(90)90872-6
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摘要: Abstract We study the Hall effect at low magnetic fields in ballistic GaAs-AlxGa1 − xAs heterostructure junctions that contain four, three, two, or one narrow constrictions junction region. These geometries are investigated to determine necessary condition for observation of quenching effect. find only four constriction geometry shows a genuine quenching. By applying backgate bias, is produced within finite electron density range. Our results interpreted framework Buttiker-Landauer formulas terms scattering electrons.
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