Crystal growth of WSi2 on a W(1 1 0) surface
作者： H Kawanowa , Y Gotoh
DOI: 10.1016/S0022-0248(98)00937-3
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摘要: Abstract The crystal growth of tetragonal WSi 2 on a W(1 1 0) surface was investigated by reflection high-energy electron diffraction (RHEED). It shown that one-dimensional grows the with [ 7/2 5/8 0 5/4 ] structure in early stage growth. crystals have an epitaxial orientation relationship [1 0 0] //[0 0 1]W, where (0 1 3) plane is inclined to at 1.3°.
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