Work Function Tuning of MoxSiyNz metal gate electrode for Advanced CMOS Technology
作者： Pommy Patel , Douglas A Buchanan , Robert M Wallace
关键词:
摘要: … XPS surface analysis confirmed a steady increase in the total nitrogen concentration in the MoSiN … in MoSiN films can be used to tune the MoSiN gate work function over a wide range. …
springer.com
sci-hub.se 参考文章(8)
J. S. Reid, E. Kolawa, C. M. Garland, M.-A. Nicolet, F. Cardone, D. Gupta, R. P. Ruiz, Amorphous (Mo, Ta, or W)-Si-N diffusion barriers for Al metallizations Journal of Applied Physics. ,vol. 79, pp. 1109- 1115 ,(1996) , 10.1063/1.360909
D. Felnhofer, E. P. Gusev, D. A. Buchanan, Photocurrent measurements for oxide charge characterization of high-κ dielectric metal oxide semiconductor capacitors Journal of Applied Physics. ,vol. 103, pp. 054101- ,(2008) , 10.1063/1.2841059
T. Mochizuki, T. Tsujimaru, M. Kashiwagi, Y. Nishi, Film Properties of MoSi/sub 2/ and Their Application to Self-Aligned MoSi/sub 2/ Gate MOSFET IEEE Journal of Solid-state Circuits. ,vol. 15, pp. 496- 500 ,(1980) , 10.1109/JSSC.1980.1051428
R. J. Powell, Interface Barrier Energy Determination from Voltage Dependence of Photoinjected Currents Journal of Applied Physics. ,vol. 41, pp. 2424- 2432 ,(1970) , 10.1063/1.1659238
V. Misra, Huicai Zhong, H. Lazar, Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS IEEE Electron Device Letters. ,vol. 23, pp. 354- 356 ,(2002) , 10.1109/LED.2002.1004233
R. Lander, J. Hooker, J. van Zijl, F. Roozeboom, M. Maas, Y. de Tamminga, R. Wolters, A Tuneable Metal Gate Work Function Using Solid State Diffusion of Nitrogen 32nd European Solid-State Device Research Conference. pp. 103- 106 ,(2002) , 10.1109/ESSDERC.2002.194880
Tzung-Lin Li, Wu-Lin Ho, Hung-Bin Chen, H.C.-H. Wang, Chun-Yen Chang, Chenming Hu, Novel dual-metal gate technology using Mo-MoSi/sub x/ combination IEEE Transactions on Electron Devices. ,vol. 53, pp. 1420- 1426 ,(2006) , 10.1109/TED.2006.874227
Y. Taur, Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs IEEE Transactions on Electron Devices. ,vol. 48, pp. 2861- 2869 ,(2001) , 10.1109/16.974719