Cz-Silicon Wafers and Solar Cells from Compensated Solar-Grade Silicon Feedstock: Potential and Challenges
作者： J. Broisch , W. Kwapil , S. Rein , A.-K. Soiland , S. Grandum
DOI: 10.4229/25THEUPVSEC2010-2BO.1.2
关键词:
摘要: Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the minority carrier lifetime of p-type Czochralski-grown (Cz) wafers. Depending linearly on boron concentration NA in uncompensated silicon, defect density was suggested depend net doping p0 = NA-ND compensated samples, containing similar amounts and phosphorus [1]. However, this dependence contradicts observations LID n-type silicon wafers [2], which are confirmed study by investigating a large variety pand samples. In spite their high content, samples show less pronounced than boron. Our experiments indicate that Cz is only function compensation ratio RC (NA+ND)/(NA-ND) may be described consistently Cz-Si an exponential decay. Beyond these fundamental effects, reveals crystals from industrial solar-grade feedstock there no feedstock-related losses material quality addition intrinsic LID. By manufacturing solar cells cell process stable degraded efficiencies 17.4% achieved average over whole crystal length made with without blend 33% SoG feedstock.
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