Issues Associated With Polarization Independence in Silicon Photonics

作者: Graham T. Reed , Goran Z. Mashanovich , William R. Headley , Branislav Timotijevic , Frederic Y. Gardes

DOI: 10.1109/JSTQE.2006.883136

关键词:

摘要: Interest in silicon photonics is experiencing a dramatic increase due to emerging applications areas and several high profile successes device technology development. Despite early work dating back the mid-1980s, progress has been made only recent years. While many approaches research have developed, striking difference between of mid-1990s, more work, that latter associated with trend reduce cross sectional dimensions waveguides form devices. The question arises therefore, as whether one should move very small strip (silicon wires) order 250 nm height few hundred nanometres width for improved performance but little hope polarization independence, or utilize slightly larger rib offer opportunity control dependence In this paper, we discuss devices suitable approach other, present designs both waveguides. particular, polarization-independent ring resonators free spectral ranges up 12 nm, propose modulators bandwidths tens gigahertz regime, grating-based couplers waveguides, and/or wafer scale testing, well novel means developing Bragg gratings via ion implantation

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