New magnetoresistive materials

摘要: Devices and circuits are described employing magnetoresistive materials exhibiting a negative Δρ effect (Δρ=ρ∥-ρ⊥). In these materials, the electrical resistivity ρ of material in direction perpendicular to current through is greater than ρ∥ parallel material. These ferromagnetic magnetoresistance presence an magnetic field applied magnetize it saturation at room temperature. devices have advantages over conventional type, which positive quantity.