Single Gate Semiconductor Device
作者： Cheng-Chi Lin , Chin-Pen Yeh , Shyi-Yuan Wu , Shih-Chin Lien
DOI:
关键词:
摘要: A semiconductor device has a gate multiple doping regions on both sides of the gate. The can be shared by transistor and capacitor.
lens.org 参考文章(7)
Zeqiang Yao, Xiangming Xu, Multi-oxide OTP device ,(2005)
Bohumil Lojek, Twin eeprom memory transistors with subsurface stepped floating gates ,(2005)
Cheng-Chi Lin, Chin-Pen Yeh, Shyi-Yuan Wu, Shih-Chin Lien, Single gate nonvolatile memory cell with transistor and capacitor ,(2008)
Hyun-Khe Yoo, Weon-Ho Park, EEPROM device and method of fabricating the same ,(2004)
Hsin-Chang Lin, Cheng-Ying Wu, Hao-Cheng Chang, Ming-Tsang Yang, Wen-Chien Huang, Single-gate non-volatile memory and operation method thereof ,(2006)
Roget Chang, Daniel Huang, Lee Zhung Wang, Hsin Chang Lin, Nonvolatile flash memory and method of operating the same ,(2004)
Muhammad I. Chaudhry, Damian A. Carver, Low-cost, low-voltage single-layer polycrystalline EEPROM memory cell integration into BiCMOS technology ,(2005)