Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor
作者： P. T. Tue , T. Miyasako , E. Tokumitsu , T. Shimoda
DOI: 10.1155/2013/692469
关键词:
摘要: We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of ferroelectric-gate thin-film transistor memory (FGT) which uses solution-processed indium-tin-oxide (ITO) lead-zirconium-titanate (PZT) film as gate insulator, respectively. Good characteristics such high “on/off” current ratio, mobility, large window 108, 15.0 cm2 V−1 s−1, 3.5 V were obtained, Further, correlation effective coercive voltage, charge injection effect, FGT’s was investigated. It is found that the from to layer, occurs at electric field, dramatically influences window. The window’s enhancement can be explained by dual effect layer: (1) reduction (2) an increase voltage dropped on insulator.
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