Method for producing semiconductor device and apparatus for treating semiconductor device
作者： Mitsunori Sakama , Yasuhiko Takemura , Shunpei Yamazaki
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摘要: In forming an insulating film for a thin transistor (TFT), thermal oxidation is formed by of silicon at 500° to 700° C. or composed mainly oxide deposited physical vapor deposition (PVD) chemical (CVD) so as cover island-like crystalline silicon, and then the resulting annealed 400° C., preferably 450° 650° in highly reactive atmosphere nitrogen which photoexcited photodecomposed ultraviolet rays. The thus modified used gate film.
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