Uv treatment for carbon-containing low-k dielectric repair in semiconductor processing
作者： William Crew , Bart van Schravendijk
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摘要: A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The is particularly applicable in context damascene processing. provides forming a semiconductor device by depositing layer on substrate and trench layer, having sidewalls ending at bottom. then exposed to UV radiation and, optionally gas phase source —CH 3 groups, repair material bottom caused formation process (generally etching, ashing, wet or dry cleaning). similar treatment, with without may be applied subsequent planarization operation.
google.com.tr 参考文章(187)
Per-Ove Hansson, Randhir Thakur, Arkadii Samoilov, Cluster tool for advanced front-end processing ,(2006)
Mitsunori Sakama, Yasuhiko Takemura, Shunpei Yamazaki, Method for producing semiconductor device and apparatus for treating semiconductor device ,(1995)
Eller Juco, Martin Seamons, Reza Arghavani, Keebum Jung, Sum-Yee Tang, Stress-tuned, single-layer silicon nitride film ,(2004)
Ernst Granneman, Pekka Soininen, Ivo Raaijmakers, Trench isolation for integrated circuit ,(2001)
Grant Kloster, Boyan Boyanov, Michael Haverty, Mansour Moinpour, Michael Goodner, Reducing internal film stress in dielectric film ,(2005)
Jaeyong Park, Fred T K Cheung, Arvind Halliyal, Hidehiko Shiraiwa, Process for reducing hydrogen contamination in dielectric materials in memory devices ,(2003)
Shi-Woo Rhee, Chung Yi, Method for preparing dielectric films at a low temperature ,(2003)
Vladislav Y. Vassiliev, Method of fluorinated silicon oxide film deposition ,(1997)
Lewis Stern, John Albright, Deposition of tensile and compressive stressed materials ,(2006)
Chung-Chi Ko, Syun-Ming Jang, Tien-I Bao, Lih-Ping Li, Method for forming a carbon doped oxide low-k insulating layer ,(2002)