Deposition of tensile and compressive stressed materials
作者： Lewis Stern , John Albright
DOI:
关键词: Substrate (electronics) 、 Electrode 、 Silicon nitride 、 Ultimate tensile strength 、 Composite material 、 Materials science 、 Deposition (law) 、 Compressive strength 、 Voltage 、 Electric field
摘要: A method of depositing tensile or compressively stressed silicon nitride 20 on a substrate 32 is described. Silicon having stress with an absolute value at least about 1200 MPa can be deposited from process gas comprising silicon-containing and nitrogen-containing gas, maintained in electric field strength 25 V/mil to 300 V/mil. The formed by applying voltage power level less than 60 Watts across electrodes 105, 109 that are spaced apart separation distance 600 mils. Alternatively, compressive 2000 400 800
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