Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide
作者： Bernd Kastenmeier , Peter Matsuo , Gottlieb S. Oehrlein
DOI:
关键词: Inorganic chemistry 、 Chemical engineering 、 Nitride 、 Etching (microfabrication) 、 Buffered oxide etch 、 Materials science 、 LOCOS 、 Silicon dioxide 、 Silicon 、 Dry etching 、 Silicon nitride
摘要: A dry etch process is described for removing silicon nitride masks from dioxide or use in a semiconductor fabrication process. remote plasma oxygen/nitrogen discharge employed with small additions of fluorine source. The gas mixture controlled so that atomic within the reaction chamber maintained at very low flows compared oxygen and nitrogen reactants. Parameters are an oxidized reactive layer formed above any exposed matter seconds initiating etching nitride. Etch rates to greater than 30:1 described, as well 70:1.
lens.org 参考文章(13)
Klaus Paschke, Method of selective gas etching on a silicon nitride layer ,(1977)
David W. Benzing, Apparatus for in-situ chamber cleaning ,(1986)
Walter Merry, Jitske Trevor, Gladys D. Quinones, Ajey M. Joshi, Cynthia B. Brooks, Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of (CH3F or CH2F2) and CF4 and O2 ,(1998)
Eric Mendel, Klaus Dietrich Beyer, Karen Ann Nummy, Seiki Ogura, James Steve Makris, Jacob Riseman, Nivo Rovedo, Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique ,(1986)
P. J. Matsuo, B. E. E. Kastenmeier, J. J. Beulens, G. S. Oehrlein, Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 15, pp. 1801- 1813 ,(1997) , 10.1116/1.580795
John H. Keller, Michael S. Barnes, Jonathan D. Chapple-Sokol, William M. Holber, Dragan Podlesnik, Tina J. Cotler, Etching of silicon dioxide selectively to silicon nitride and polysilicon ,(1993)
B. E. E. Kastenmeier, P. J. Matsuo, J. J. Beulens, G. S. Oehrlein, Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures Journal of Vacuum Science and Technology. ,vol. 14, pp. 2802- 2813 ,(1996) , 10.1116/1.580203
Masahiro Shibagaki, Yasuhiro Horiike, Kazuo Niwa, Apparatus for the plasma treatment of semiconductors ,(1977)
Andrew David Johnson, Nitrogen trifluoride-oxygen thermal cleaning process ,(1997)