Method for forming a carbon doped oxide low-k insulating layer
作者： Chung-Chi Ko , Syun-Ming Jang , Tien-I Bao , Lih-Ping Li
DOI:
关键词: Plasma 、 Dielectric 、 Alkyl 、 Wafer 、 Equivalent oxide thickness 、 Materials science 、 Semiconductor device 、 Oxide 、 Chemical engineering 、 Inorganic chemistry 、 Layer (electronics)
摘要: A method for forming a dielectric insulating layer with reduced constant and increased hardness semiconductor device manufacturing including providing wafer having process surface insulting thereover; depositing according to CVD carbon doped oxide the an oregano-silane precursor Si—O groups Si—Ry groups, where R is alkyl or cyclo-alkyl group y number of bonded Si; and, exposing hydrogen plasma treatment period time thereby reducing thickness increasing hardness.
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