Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure

摘要: A low k carbon-doped silicon oxide dielectric material dual damascene structure is formed by improvements to a process wherein first photoresist mask used form via openings through layer of material, followed removal the mask; and second subsequently trenches in corresponding desired pattern metal interconnects for an integrated circuit structure, mask. The improved invention comprises: forming hard over upper previously etch stop lower on structure; having therein layer; etching vias replicated without layers beneath then removing trench resist masks; using masks respectively material; whereby can be damage during formation openings.