Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures
作者： Masahiro Tsuchiya , Hiroyuki Sakaki
DOI: 10.1063/1.97360
关键词:
摘要: The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers 8 atomic layers. It shown for the first time that density JRT resonant varies from 8×102 to 1.6×104 A cm−2 by choice width 9 5 nm accordance with theoretical calculations. Furthermore, one these diodes shows excellent current‐voltage characteristics at room temperature a peak valley ratio 3, highest value ever reported.
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