Capacitance Storage Using a Ferroelectric Medium and a Scanning Capacitance Microscope (SCM)
作者： Ryoichi Yamamoto
DOI: 10.1007/978-3-642-35792-3_15
关键词:
摘要: Recently, a lot of research has been carried out concerning future data storage technologies, which are mainly centered on magnetic recording, optical and scanning probe microscope (SPM) storage.
springer.com
harvard.edu
sci-hub.st 参考文章(38)
D. M. Eigler, E. K. Schweizer, Positioning single atoms with a scanning tunnelling microscope Nature. ,vol. 344, pp. 524- 526 ,(1990) , 10.1038/344524A0
Ichiro Fujiwara, Sigeru Kojima, Jun'etsu Seto, High Density Charge Storage Memory with Scanning Probe Microscopy Japanese Journal of Applied Physics. ,vol. 35, pp. 2764- 2769 ,(1996) , 10.1143/JJAP.35.2764
R. C. Barrett, C. F. Quate, Charge storage in a nitride‐oxide‐silicon medium by scanning capacitance microscopy Journal of Applied Physics. ,vol. 70, pp. 2725- 2733 ,(1991) , 10.1063/1.349388
J. R. Matey, J. Blanc, Scanning capacitance microscopy Journal of Applied Physics. ,vol. 57, pp. 1437- 1444 ,(1985) , 10.1063/1.334506
Atsushi Fukumoto, Shigeo Kubota, Superresolution of Optical Disks Using a Small Aperture Japanese Journal of Applied Physics. ,vol. 31, pp. 529- 533 ,(1992) , 10.1143/JJAP.31.529
Andrew S. Grove, Physics and technology of semiconductor devices Wiley. ,(1967)
Ryoichi Yamamoto, Kazuo Sanada, Shizuo Umemura, Capacitance Modulation from Submicron Domain on Ferroelectric-Semiconductor Media Japanese Journal of Applied Physics. ,vol. 35, pp. 5284- 5287 ,(1996) , 10.1143/JJAP.35.5284
Kazuya Goto, Kazuhiro Hane, None, Tapping mode capacitance microscopy Review of Scientific Instruments. ,vol. 68, pp. 120- 123 ,(1997) , 10.1063/1.1147749
S. Iwasaki, Y. Nakamura, H. Muraoka, Wavelength response of perpendicular magnetic recording IEEE Transactions on Magnetics. ,vol. 17, pp. 2535- 2537 ,(1981) , 10.1109/TMAG.1981.1061682
M. Dreyer, R. Wiesendanger, Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures Applied Physics A. ,vol. 61, pp. 357- 362 ,(1995) , 10.1007/BF01540108