Charge storage in a nitride‐oxide‐silicon medium by scanning capacitance microscopy
作者： R. C. Barrett , C. F. Quate
DOI: 10.1063/1.349388
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摘要: In this paper we describe a variant of the scanning capacitance microscope (SCaM) which is based on atomic force microscope. Our SCaM involves cantilever beam that used to press conducting tip against substrate coated with dielectric film. A sensor then measure tip‐sample as function lateral position. The deflection can also be independently surface topography. This electrical properties films and their underlying substrates. We have applied study nitride‐oxide‐silicon (NOS) system. system has been studied extensively because its ability store information by trapping charge in silicon nitride. Commercial semiconductor nonvolatile memories designed using NOS technology. apply localized bias sample, causing tunnel through oxide layer to...
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