Indium-Tin Oxide 透明導電膜の異常電気抵抗変化

摘要: The in-situ resistivity measurement of partial crystalline amorphous ITO films was performed on annealing in various flowing gas atmospheres (air, O2, H2). It found that an abnormal increase showing a sharp peak observed at 250∼300°C regardless atmospheres. temperatures the were shifted to higher range order H2, air and O2 gases. Hall revealed carrier density mobility both sharply decrease peaks. activation energy change measured be 0.6∼0.9 eV by using Kissinger's method, whose values are different depending X-ray diffraction profiles TEM observations crystallization took place ∼150°C whole specimen area their crystal grains continuously grew with further temperature. tentatively concluded realignment Sn-O bond generate neutral (2SnIn+Oi2-)x complex most likely responsible for present observed.